february 2006 ? 2006 fairchild semiconductor corporation FDMS2572 rev c(w) www.fairchildsemi.com FDMS2572 n-channel ultrafet trench ? mosfet 150v, 4.5a, 47m general description ultrafet devices combine characteristics that enable benchmark efficiency in powe r conversion applications. optimized for low r ds(on), low esr, low total and miller gate charge, these devices are ideal for high frequency dc to dc converters. applications ? distributed power architectures and vrms ? primary switch for 24v and 48v systems ? high voltage synchronous rectifier features ? max r ds(on) = 47m at v gs = 10v, i d = 4.5a ? typ qg = 31nc at v gs = 10 v ? low miller charge ? optimized efficiency at high frequencies absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v ds drain-source voltage 150 v v gs gate-source voltage 20 v i d drain current ? continuous (note 1a) 4.5 a ? pulsed 30 power dissipation for single operation (note 1a) 2.8 p d (note 1b) 1.1 w t j , t stg operating and storage junction temperature range ?55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 44 c/w r ja thermal resistance, junction-to-ambient (note 1b) 115 package marking and ordering information device marking device reel size tape width quantity FDMS2572 FDMS2572 7?? 12mm 3000 units 4 3 2 1 5 6 7 8 fdm s 2 5 72 n- c h a nn e l u l t r a fet tr e n c h ? m os fet s s s g d d d d pin 1 mlp 5x6 d
FDMS2572 rev c(w) www.fairchildsemi.com electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units drain-source avalanche ratings (note 1) w dss single pulse drain-source avalanche energy v dd = 75 v, i d = 15 a, l=1mh 112 mj i ar drain-source avalanche current 15 a off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 250 a 150 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 180 mv/ c i dss zero gate voltage drain current v ds = 120 v, v gs = 0 v 1 a i gss gate?body leakage v gs = 20 v, v ds = 0 v 100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3.0 4 v v gs(th) t j gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 c ?9.8 mv/ c r ds(on) static drain?source on?resistance v gs = 10 v, i d = 4.5 a v gs = 6 v, i d = 4.5 a v gs = 10 v, i d = 4.5 a, t j = 125 c 36 39 69 47 53 103 m g fs forward transconductance v ds = 10 v, i d =4.5 a 14 s dynamic characteristics c iss input capacitance 1960 pf c oss output capacitance 130 pf c rss reverse transfer capacitance v ds = 75 v, v gs = 0 v, f = 1.0 mhz 30 pf r g gate resistance f = 1.0 mhz 1.3 t d(on) turn?on delay time 11 20 ns t r turn?on rise time 8 16 ns t d(off) turn?off delay time 38 61 ns t f turn?off fall time v dd = 75 v, i d = 1 a, v gs = 10 v, r gen = 6 31 50 ns q g total gate charge 31 43 nc q gs gate?source charge 9 nc q gd gate?drain charge v ds = 75 v, i d = 4.5 a, v gs = 10 v 7 nc drain?source diode characteristics v sd drain?source diode forward voltage v gs = 0 v, i s = 2.2 a (note 2) 0.7 1.0 v t rr diode reverse recovery time 67 ns q rr diode reverse recovery charge i f = 4.5 a, d if /d t = 100 a/s 130 nc notes: 1. r ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. a) 44c/w when mounted on a 1in 2 pad of 2 oz copper b) 115 c/w when mounted on a minimum pad of 2 oz copper scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% fdm s 2 5 72 n- c h a nn e l u l t r a fet tr e n c h ? m os fet
FDMS2572 rev c(w) www.fairchildsemi.com typical characteristics 0 5 10 15 20 25 30 35 40 012345 v ds , drain-source voltage (v) i d , drain current (a) 5.5v 4.5v v gs = 10v 5.0v 6.0v 0.8 1 1.2 1.4 1.6 1.8 0 5 10 15 20 25 30 35 40 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 4.5v 5.5v 6.5v 10v 5.0v 6.0v 7.0v figure 1. on-region characteristics. fi gure 2. on-resistance variation with drain current and gate voltage. 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 4.5a v gs = 10v 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0.11 345678910 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 2.3a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 10 20 30 40 50 2.5 3 3.5 4 4.5 5 5.5 6 v gs , gate to source voltage (v) i d , drain current (a) t a = 125 o c 25 o c -55 o c v ds = 10v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fdm s 2 5 72 n- c h a nn e l u l t r a fet tr e n c h ? m os fet
FDMS2572 rev c(w) www.fairchildsemi.com typical characteristics 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 4.5a v ds = 50v 100v 75v 0 300 600 900 1200 1500 1800 2100 2400 2700 0 25 50 75 100 125 150 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.001 0.01 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms r ds(on) limit v gs = 10v single pulse r ja = 115 o c/w t a = 25 o c 10ms 1ms 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 115c/w t a = 25c figure 9. maximum safe operating ar ea. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja =115 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization perf ormed using the conditions described in note 1b. transient thermal response will change depending on the circuit board design. fdm s 2 5 72 n- c h a nn e l u l t r a fet tr e n c h ? m os fet
FDMS2572 rev c(w) www.fairchildsemi.com dimensional outline and pad lay-out fdm s 2 5 72 n- c h a nn e l u l t r a fet tr e n c h ? m os fet
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? rev. i18 acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? wire? across the board. around the world.? the power franchise ? programmable active droop?
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